FQN1N60C mosfet equivalent, n-channel mosfet.
* 0.3 A, 600 V, RDS(on) = 11.5 W (Max.) @ VGS = 10 V, ID = 0.15 A * Low Gate Charge (Typ. 4.8 nC) * Low Crss (Typ. 3.5 pF) * 100% Avalanche Tested ABSOLU.
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